Impurity band conduction in Si-doped <b><i>?</i></b>-Ga₂O₃ films

By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field measurements (H = +/-90 kOe) showed non-linear resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics both bands yielding energies of ~ 33.7 45.6 meV. The former is consistent with the Si whereas latter suggests a residual state, likely associated DX center. This study provides critical insight into impurity band conduction defect states high-field magnetotransport measurements.